FCP360N65S3R0
Manufacturer:
On Semiconductor
Mfr.Part #:
FCP360N65S3R0
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 83 W 650 V Continuous Drain Current (ID):10 A 18 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Power Dissipation | 83 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 10 A |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 360 mΩ |
| Gate to Source Voltage (Vgs) | 2.5 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 190
Distributors
pcbx
pcbxUnit Price$2.15851
Ext.Price$2.15851
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.15851 | $2.15851 |
| 10 | $1.71681 | $17.16810 |
| 25 | $1.36550 | $34.13750 |
| 50 | $1.08608 | $54.30400 |
| 100 | $0.98191 | $98.19100 |
| 300 | $0.88595 | $265.78500 |
| 500 | $0.79938 | $399.69000 |
| 1000 | $0.74072 | $740.72000 |